Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 1, Pages 71-73Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2170655
Keywords
FETs; graphene; subharmonic resistive mixers
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Funding
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation
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We demonstrate a subharmonic resistive graphene FET mixer utilizing the symmetrical channel-resistance versus gate-voltage characteristic. A down-conversion loss of 24 dB is obtained with f(RF) = 2 GHz, f(LO) = 1.01 GHz, and f(IF) = 20 MHz in a 50-Omega-impedance system. Unlike conventional subharmonic resistive FET mixers, this type of mixer operates with only one transistor and does not need any balun at the local oscillator (LO) port, which makes it more compact.
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