Related references
Note: Only part of the references are listed.Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film Transistors
Youn-Gyoung Chang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
Te-Chih Chen et al.
APPLIED PHYSICS LETTERS (2010)
Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors
Chang Eun Kim et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics
Sangwon Lee et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
Charlene Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
Hsing-Hung Hsieh et al.
APPLIED PHYSICS LETTERS (2008)
Trap densities in amorphous-InGaZnO4 thin-film transistors
Mutsumi Kimura et al.
APPLIED PHYSICS LETTERS (2008)
Share Paper
