Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 7, Pages 1084-1086Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2193867
Keywords
Conductivity; field-effect transistor (FET); graphene; humidity; inductively coupled plasma chemical vapor deposition (CVD) (ICP-CVD); NO2; NH3; temperature
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Funding
- Basic Science Research Program through the National Research Foundation of Korea
- Korea government (MEST) [2012-0000622]
- National Research Foundation of Korea [2008-0062428] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Graphene was used for a sensing part of bottom-gate field-effect transistor (FET)-type gas sensors, and the sensing performance of the sensors was studied. We investigated the effect of temperature (T) and relative humidity on the gas sensitivity of bottom-gate graphene FETs prepared by the inductively coupled plasma chemical vapor deposition method. The conductivity change of graphene exposed to nitrogen oxide (NO2) and ammonia (NH3) was increased with increasing temperature and humidity. For NO2 gas, the graphene FET shows increasing I-D with increasing T and also increasing I-D with increasing humidity. However, the FET shows an opposite trend with the T and humidity for NH3 gas.
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