Improved Resistance Switching Characteristics in Ti-Doped Yb2O3 for Resistive Nonvolatile Memory Devices

A conventional approach of doping to control the bistable resistance switching in Yb2O3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb2O3 to Schottky type in YbTiOx. The program/erase cycles with successive readout operation over 10(5) cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 degrees C. The Ni/YbTiOx/TaN memory is a promising candidate to be integrated into future memory processes.