Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 5, Pages 715-717Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2187424
Keywords
Energy harvesting; power; silicon nanowire (SiNW); thermoelectric
Categories
Funding
- National Research Foundation of Korea
- Ministry of Education, Science, and Technology [2009-0083540]
- National Research Foundation of Korea [2009-0093249] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter demonstrates two-orders-of-magnitude enhancement in the performance of recently reported vertical silicon nanowire (SiNW)-based thermoelectric power generators (TEGs) by optimizing the filling material. As compared to SiO2 in the earlier work, the new device uses polyimide as filling material, which provides low parasitic thermal conduction and also reduces the damage to the nanowire tips. Consequently, an open-circuit voltage of 27.9 mV, a short-circuit current of 67 mu A (both improved by similar to 17x), and a maximum power output of 0.47 mu W (improved by similar to 313x) were obtained under a temperature difference of 70 K across the experimental setup. The reported improvements bring SiNW-TEGs a step closer to be used as a miniaturized clean energy source.
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