Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 7, Pages 979-981Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2195291
Keywords
AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs) (MISHEMTs); high-kappa; LaLuO3 (LLO)
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Funding
- Hong Kong Research Grants Council [611610, 611311]
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A high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec.
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