Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 5, Pages 632-634Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2118190
Keywords
Dynamic ON-resistance; field-effect transistor; field plate; GaN; gate insulator; power switch
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This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al(2)O(3) gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic ON-resistance at high-voltage operation.
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