Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 9, Pages 1209-1211Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2160611
Keywords
Graphene field-effect transistors (GFETs); hexagonal boron nitride (hBN); radio frequency (RF)
Categories
Funding
- Army Research Laboratory
- Office of Naval Research Graphene Approaches to Terahertz Electronics (GATE) Multidisciplinary University Research Initiative (MURI)
- National Science Foundation [0845287]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0845287] Funding Source: National Science Foundation
- Grants-in-Aid for Scientific Research [23310096, 19053008, 23246116] Funding Source: KAKEN
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In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
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