Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 12, Pages 1695-1697Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2167123
Keywords
Amorphous indium-gallium-zinc-oxide (a-IGZO); amorphous oxide semiconductor (AOS); flexible device; Schottky diode
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Funding
- Japan Society for the Promotion of Science [GR035]
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Diffusion-limited Schottky junctions were fabricated at 200 degrees C by employing a top amorphous In-Ga-Zn-O (a-IGZO)/bottom Pt electrode structure. Those fabricated on glass exhibited rectification ratios of I(on/off) > 10(8) and ideality factors close to unity n = 1.04. The temperature dependence values of current-voltage characteristics were small and not explained by a simple thermionic emission theory; instead, a percolation model explains them with an average Schottky barrier height of 1.2 eV and its distribution width of 0.13 eV. Flexible a-IGZO/Pt Schottky junctions were also demonstrated on polyimide substrates with n = 1.2 and I(on/off) > 10(5).
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