Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 10, Pages 1427-1429Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2161601
Keywords
Crossbar array; resistive switching; resistance random access memory; sneak current; 4F(2)
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Funding
- National Science Council of Taiwan [NSC 97-2218-E009-039-MY3]
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A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
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