Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 11, Pages 1516-1518Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2164232
Keywords
Heterojunction; indium gallium arsenide; indium phosphide; MOSFETs; nanoelectronics; subthreshold swing (SS); transistors; tunnel field-effect transistor (TFET); tunneling
Categories
Funding
- Semiconductor Research Corporation's Nanoelectronics Research Initiative
- National Institute of Standards and Technology through the Midwest Institute for Nanoelectronics Discovery
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Vertical n-channel tunnel field-effect transistors (FETs) based on compound semiconductors, in a new geometry with tunneling normal to the gate, are demonstrated for the first time using an n(+) In0.53Ga0.47As/n(+) Inx=0.53->1GaAs/p(+) InP heterojunction. At 300 K, the TFETs show an on-current of similar to 20 mu A/mu m and a minimum subthreshold swing (SS) of 130 mV/dec using an Al2O3 gate dielectric (EOT similar to 3.4 nm). Postdeposition annealing of the gate dielectric improves SS, and device passivation using atomic layer deposition can effectively prevent degradation of drain current over time. The clear negative differential resistance (NDR) observed in the tunnel junction and the trend toward NDR in the TFETs confirm that the transport mechanism in these FETs is interband tunneling.
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