Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 11, Pages 1552-1554Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2165694
Keywords
Bias stress; IGZO; stability
Categories
Funding
- National Science Council [NSC 99-2628-E-009-010, 97-2221-E-009-036-MY3]
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This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.
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