Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 6, Pages 812-814Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2131113
Keywords
Chemical vapor deposition (CVD) graphene; Dirac point; graphene field-effect transistor (GFET); short-channel effect
Categories
Funding
- Defense Advanced Research Projects Agency [FA8650-08-C-7838]
Ask authors/readers for more resources
This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 mu m down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electron-hole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available