Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 2, Pages 143-145Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2091251
Keywords
Adhesive flexible tape; GaN; high-electron-mobility transistors (HEMTs); strain
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In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (L-G = 2 mu m) on a flexible tape are presented. Under 0.16% strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands V-DS = 18 V.
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