Related references
Note: Only part of the references are listed.Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
Takayoshi Shimura et al.
APPLIED PHYSICS EXPRESS (2010)
Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices
Yung-Hsien Wu et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric
Yung-Hsien Wu et al.
MICROELECTRONIC ENGINEERING (2010)
Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
Choong Hyun Lee et al.
APPLIED PHYSICS EXPRESS (2009)
Electrical Characteristics of Thermal-SiON-Gated Ge p-MOSFET Formed on Si Substrate
Yung-Hsien Wu et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Ge-Based Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory Formed on Si Substrate
Yung-Hsien Wu et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
G. Mavrou et al.
APPLIED PHYSICS LETTERS (2008)
Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
P. Tsipas et al.
APPLIED PHYSICS LETTERS (2008)
Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal-insulator-semiconductor characteristics
Koji Kita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
High-k/Ge MOSFETs for future nanoelectronics
Yoshiki Kamata
MATERIALS TODAY (2008)
Impact strain engineering on gate stack quality and reliability
C. Claeys et al.
SOLID-STATE ELECTRONICS (2008)
Effects of sulfur passivation on germanium MOS capacitors with HfON gate dielectric
Ruilong Xie et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
Yung-Hsien Wu et al.
APPLIED PHYSICS LETTERS (2007)
Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
Kyoung H. Kim et al.
APPLIED PHYSICS LETTERS (2007)
Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides
Chi On Chui et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)