Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 8, Pages 1125-1127Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2158056
Keywords
AlN; nonvolatile memory (NVM); transparent resistive random access memory (ReRAM) (T-ReRAM)
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Funding
- Seoul RBD Program [R1009391]
- Ministry of Education, Science and Technology [2010-00218]
- Samsung Semiconductor Research Center at Korea University
- National Research Foundation of Korea [과C6A1602, 2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under +/- 3 V/10 ns with a high-to-low resistance ratio greater than 10(2). In the reliability test, the device showed an endurance of > 10(8) cycles and a retention time of > 10(5) s at 85 degrees C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.
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