Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 509-511Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2105459
Keywords
Dual-gate; photo-leakage current; thin-film transistors (TFTs); zinc oxide
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Origin of photo-leakage current in ZnO thin film transistors (TFTs) has been attributed to tunneling current through the Schottky contact properties of source due to Schottky barrier narrowing by light-induced holes. Therefore, it is important to maintain sufficient potential barrier width under light-irradiation in order to suppress the photo-leakage current. It is shown that dual-gate ZnO TFTs are effective to reduce the photo-leakage current.
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