Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 961-963Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2150193
Keywords
Chalcogenide; nonvolatile memories; phase-change memory (PCM); thermal conductivity anisotropy
Categories
Funding
- Intel Corporation
- Semiconductor Research Corporation [2009-VJ-1996]
- Stanford Graduate Fellowship
- National Science Foundation [CBET-0853350]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [853350] Funding Source: National Science Foundation
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Thermal conduction strongly influences the programming energy and speed in phase-change-memory devices. The thermal conductivity of the crystalline phase of Ge2Sb2Te5 can be strongly anisotropic due to phase impurities at grain boundaries. This letter models this effect using effective medium arguments, lends further support to the hypothesis that phase impurities are responsible for the anisotropy, and estimates the impact of anisotropic heat conduction on device performance. Electrothermal simulations predict that the reduced in-plane conductivity will allow closer spacing of lateral-cell devices and reduce the reset programming current by 20%-30%.
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