Related references
Note: Only part of the references are listed.Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
D. Ielmini et al.
NANOTECHNOLOGY (2011)
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F. Nardi et al.
SOLID-STATE ELECTRONICS (2011)
Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks
Jordi Sune et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
S. Spiga et al.
MICROELECTRONIC ENGINEERING (2008)
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
I. H. Inoue et al.
PHYSICAL REVIEW B (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
New physics-based analytic approach to the thin-oxide breakdown statistics
J Suñé
IEEE ELECTRON DEVICE LETTERS (2001)
Share Paper
