Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 11, Pages 1570-1572Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2163613
Keywords
Reset statistics; resistive random access memory (RRAM)
Categories
Funding
- Spanish Ministry of Science and Technology [TEC2009-09350]
- European Union
- DURSI of the Generalitat de Catalunya [2009SGR783]
- Ministry of Science and Technology of China [2010CB934200, 2011CBA00602, 2009AA03Z306]
- National Natural Science Foundation of China [60825403, 50972160]
- Fondazione Cariplo [2010-1055]
- ICREA
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In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both V(reset) and I(reset) cumulative distributions increase linearly with 1/R(on). The value of V(reset63%) is roughly independent of R(on) while I(reset63%) increases with 1/R(on). Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement.
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