Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 898-900Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2143386
Keywords
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs); carrier number fluctuation; generation-recombination (g-r) noise; low-frequency noise (LFN)
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Funding
- Greek Ministry of Education, Lifelong Learning and Religious Affairs
- Versatilis LLC.
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The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents I-d < 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.
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