Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 949-951Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2143691
Keywords
Electrochemical; filament; forming stage; kinetic Monte Carlo (KMC); resistive switching random access memory (RRAM)
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The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called voltage-time dilemma is simulated and studied. In addition, the various chemical and physical processes that produce these results are discussed. Finally, the simulated pattern is compared with experiments conducted on Cu/H2O and Ag/Ag2S systems.
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