Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 5, Pages 653-655Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2110633
Keywords
Pt electrodes; sol-gel; ultraviolet (UV) detector; ZrxTi1-xO2
Categories
Funding
- National Natural Science Foundation of China [60977031]
- Chinese National Programs for High Technology Research and Development [2009AA03Z402]
- Science and Technology Agency of Jilin Province [20080330]
- Ministry of Education of China [20090061110040]
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In this letter, visible-blind ultraviolet (UV) photodetectors based on Zr0.27Ti0.73O2 thin films with Pt electrodes were fabricated. The Zr0.27Ti0.73O2 thin films were prepared via the sol-gel method and characterized by means of X-ray diffraction, scanning electron microscopy, XPS, and UV-visible absorption spectra. At 5-V bias, the dark current of the detector was only 6 nA. Under the irradiation of 300-nm UV light, a high responsivity of 702.5 A/W was achieved due to the high internal gain. The high gain is caused by the introduction of zirconia. The rise and fall times of the device were 896.6 and 578.1 ms, respectively. Compared with TiO2-based detectors, the Zr0.27Ti0.73O2-based detector with Pt electrodes exhibits a much higher responsivity, a faster recovery time, and a wider detection range.
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