A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

In this letter, a resistive random access memory based on Ni electrode/HfOx dielectric/n(+) Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>10(3)), good retention characteristics (>10(5) s at 150 degrees C), satisfactory pulse switching endurance (>10(5) cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.