Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks

Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of > 10(4), mobilities of similar to 1.31 cm(2) V-1 s(-1), and threshold voltages of similar to-1 V. Under UV treatment (340 nm, 57.46 mW/cm(2)), the devices exhibited relative photoconductivity ratio increases of 10(5) at a depletion state of -8 V gate bias (1.56 x 10(3) A/W). The fabricated FETs exhibit a broad range of electrical characteristics because of variation in the contact quality of the metal/NW, the dielectric/NW, and the NW/NW interfaces. However, the fabricated approach offers a cost-effective route to integrate self-assembled ZnO NW network-based FETs.