Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 3, Pages 339-341Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2094600
Keywords
Field-effect transistor (FET); photosensitivity; ZnO nanowire
Categories
Funding
- Ministry of Education
- Bureau of Energy, Ministry of Economic Affairs [98-D0204-6]
- National Science Council of Taiwan [NSC 96-2221-E-006-079-MY3]
- Center for Micro/Nano Science and Technology, National Cheng Kung University
- TDPA Lamp Development of White Light-Emitting Diode for Local Lighting [TDPA 97-EC-17-A-07-S1-105]
- National Science Council of the Republic of China in Taiwan [NSC 97-2623-E-168-001-IT, NSC-98-2221-E-150-005-MY3]
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Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of > 10(4), mobilities of similar to 1.31 cm(2) V-1 s(-1), and threshold voltages of similar to-1 V. Under UV treatment (340 nm, 57.46 mW/cm(2)), the devices exhibited relative photoconductivity ratio increases of 10(5) at a depletion state of -8 V gate bias (1.56 x 10(3) A/W). The fabricated FETs exhibit a broad range of electrical characteristics because of variation in the contact quality of the metal/NW, the dielectric/NW, and the NW/NW interfaces. However, the fabricated approach offers a cost-effective route to integrate self-assembled ZnO NW network-based FETs.
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