Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 913-915Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2149494
Keywords
Carbon nanotube network; carrier mobility; current exponent; gate capacitance; hysteresis
Categories
Funding
- Ministry of Education of China [708033]
- State Key Laboratory of ASIC and System at Fudan University
- Chinese Scholarship Council
- Swedish Research Council [2009-8068]
- Swedish Government Agency for Innovation Systems (VINNOVA) [2005-01138]
- VINNOVA iPack Vinnex Excellence Center
Ask authors/readers for more resources
An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available