4.6 Article

Mobility Extraction for Nanotube TFTs

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 913-915

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2149494

Keywords

Carbon nanotube network; carrier mobility; current exponent; gate capacitance; hysteresis

Funding

  1. Ministry of Education of China [708033]
  2. State Key Laboratory of ASIC and System at Fudan University
  3. Chinese Scholarship Council
  4. Swedish Research Council [2009-8068]
  5. Swedish Government Agency for Innovation Systems (VINNOVA) [2005-01138]
  6. VINNOVA iPack Vinnex Excellence Center

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An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.

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