Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride

We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride (SiNx) gate dielectric show effective mobility values of 0.59 cm(2)/Vs, contact resistances as low as 2.4 k Omega . cm, and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.