Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 9, Pages 1305-1307Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2160520
Keywords
Contact resistance; organic thin film transistors; pentacene; silicon nitride
Categories
Funding
- Research Councils UK
- Engineering and Physical Sciences Research Council [EP/F04139X/1, EP/F039948/1, EP/H002022/1] Funding Source: researchfish
- EPSRC [EP/F039948/1, EP/H002022/1, EP/F04139X/1] Funding Source: UKRI
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We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride (SiNx) gate dielectric show effective mobility values of 0.59 cm(2)/Vs, contact resistances as low as 2.4 k Omega . cm, and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.
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