Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 1, Pages 63-65Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2084560
Keywords
Resistive random-access memory (RRAM); switching speed; uniformity
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Funding
- Korea Science and Engineering Foundation
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance, which has a smaller gap distance confirmed by C-AFM, was successfully obtained. The leaky high-resistance state shows significantly improved switching uniformity compared to the high-resistance state, which has a higher resistance than the leaky high-resistance state, because of the confinement of the randomly formed conducting filaments. A faster operation speed was achieved using the smaller gap distance. To confirm the improved switching speed, we monitored the real-time oscilloscope response.
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