Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 1, Pages 75-77Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2086044
Keywords
Channel mobility; geometric magnetoresistance (gMR)
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Funding
- Office of Microelectronic Programs, National Institute of Standards and Technology
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Geometric magnetoresistance (gMR) provides a promising solution to the difficult challenges associated with channel mobility extraction in nanoscale transistors. However, this technique requires significant experimental considerations which are uncommon in most laboratories. In addition, removing the influence of series resistance on the extracted mobility introduces further difficulty. In this letter, we present a new gMR measurement methodology that not only greatly simplifies the experimental requirements but also yields mobility values which are free from series resistance effects.
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