Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 12, Pages 1764-1766Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2169931
Keywords
Large compressive strain; multilayered diaphragm structure; silicon nanowire (SiNW)
Categories
Funding
- National University of Singapore [MOE 2009-T2-011 (R263000598112)]
- SERC, Agency for Science, Technology and Research [0921480070, 1021010022, 1021650084, 1021520013]
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The characteristics of piezoresistive silicon nanowires (SiNWs) under compressive strain as large as 1.7% are reported. The SiNW is embedded in a multilayered diaphragm structure consisting of silicon nitride and silicon oxide. After leveraging the high fracture stress and intrinsic tensile stress of silicon nitride layer to produce a flat diaphragm, we can create large compressive strain to the SiNW without damaging the diaphragm. The relationship between SiNW resistance change and applied strain is measured and investigated with 2-mu m and 5-mu m SiNWs for both scientific and practical points of view. This approach demonstrates the validity to reveal the SiNW properties under large strain, and the exploration provides good reference for future SiNW-based MEMS sensor design.
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