Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 5, Pages 689-691Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2112753
Keywords
Ballistic quantum transport; band-to-band tunneling; heterojunction; steep subthreshold
Categories
Funding
- FCRP Center on Functional Engineered and Nano Architectonics
- National Science Foundation
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We propose a heterojunction vertical tunneling field-effect transistor and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of TFETs for high performance. The turn-on in the pocket region of the device is dictated by the modulation of heterojunction barrier height. The steepness of turn-on is increased because of simultaneous onset of tunneling in the pocket and the region underneath and also due to the contribution of vertical tunneling in the pocket to the current. These factors can be engineered by tuning heterojunction band offsets.
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