Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 5, Pages 641-643Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2118733
Keywords
Frequency dependence; gate capacitance; nanotube networks; percolation; transmission line model
Categories
Funding
- Ministry of Education of China [708033]
- State Key Laboratory of ASIC and System at Fudan University
- Chinese Scholarship Council
- Swedish Research Council (VR) [2009-8068]
- Swedish Government Agency for Innovation Systems (VINNOVA) [2005-01138]
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This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.
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