Related references
Note: Only part of the references are listed.Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
G. Meneghesso et al.
APPLIED PHYSICS LETTERS (2010)
The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs
R. Cuerdo et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Anomalous Kink Effect in GaN High Electron Mobility Transistors
Gaudenzio Meneghesso et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
Wanjun Chen et al.
IEEE ELECTRON DEVICE LETTERS (2009)
A 120-W boost converter operation using a high-voltage GaN-HEMT
Wataru Saito et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Electronic properties of the EC-0.6 eV electron trap in n-type GaN
Julien Pernot et al.
JOURNAL OF APPLIED PHYSICS (2008)
Deep level characteristics in n-GaN with inductively coupled plasma damage
H. K. Cho et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Anomalous behavior of AlGaN/GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling
H. F. Sun et al.
APPLIED PHYSICS LETTERS (2007)
Transient pulsed analysis on GaNHEMTs at cryogenic temperatures
CH Lin et al.
IEEE ELECTRON DEVICE LETTERS (2005)
30-W/mm GaNHEMTs by field plate optimization
YF Wu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Drain current DLTS of AlGaN/GaN HEMTs
T Mizutani et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2003)
Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs
A Mazzanti et al.
IEEE ELECTRON DEVICE LETTERS (2002)
A physical model for the kink effect in InAlAs/InGaAs HEMT's
MH Somerville et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)
New aspects and mechanism of kink effect in static back-gate transconductance characteristics in fully-depleted SOI MOSFET's on high-dose SIMOX wafers
T Ushiki et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)
Share Paper
