Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 12, Pages 1449-1451Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2074177
Keywords
Al2O3; atomic layer deposition (ALD); resistive random access memory (RRAM); resistive switching
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Funding
- Defense Advanced Research Projects Agency SyNAPSE
- National Science Foundation [ECCS 0950305]
- Stanford Non-Volatile Memory Technology Research Initiative
- O.G. Villard Engineering Fund at Stanford
- Samsung Fellowship
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Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100 degrees C and 300 degrees C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (similar to 1 mu A) was obtained, together with adequate voltage margin.
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