Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 1005-1007Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2053695
Keywords
Flexible memory; graphene oxide; resistive switching memory
Categories
Funding
- National Research Foundation of Korea [2008-02744, 2009-0083380]
- ETRI [10ZE1160]
- National Program for Next-Generation Nonvolatile Memory [10029953-2009-31]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10029953] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Science, ICT & Future Planning, Republic of Korea [KINC01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [10ZE1160] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-50174, 2008-2002744] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 10(3), low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics.
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