Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 3, Pages 225-227Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2038806
Keywords
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT); high ON current; ZrO2
Categories
Funding
- Korea Institute of Science and Technology
- MKE/KEIT [2009-F-018-01]
- National Research Council of Science & Technology (NST), Republic of Korea [2E21760] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 mu m) with ZrO2 shows high performance such as high ON current of 2.11 mA and high field effect mobility of 28 cm(2)/(V. s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
