Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 2, Pages 117-119Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2036276
Keywords
Nonvolatile memory; resistance random access memory (RRAM); resistive switching; ZrO2
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Funding
- National Basic Research Program of China [2010CB934200, 2006CB302706]
- National Natural Science Foundation of China [60825403, 50972160]
- Hi-Tech Research and Development Program of China [2008AA031403, 2009AA03Z306]
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The reliable resistive switching properties of Au/ZrO2/Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 10(4)), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 degrees C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
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