Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 7, Pages 692-694Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2047234
Keywords
Dark count rate (DCR); random telegraph signal (RTS); single-photon avalanche diodes (SPADs)
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Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-mu m CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.
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