Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 11, Pages 1263-1265Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2068277
Keywords
Electric double layer (EDL); low voltage; proton conductor; vertical homojunction thin-film transistors
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Funding
- National Natural Science Foundation of China [10874042]
- Foundation for the Author of National Excellent Doctoral Dissertation of PR China [200752]
- Natural Science Foundation of Zhejiang Province [0804201051]
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Inorganic solid-state electrolyte film based on H3PO4-treated nanogranular SiO2 with high specific capacitance (8 mu F/cm(2)) is developed for vertical indium-tin-oxide (ITO) homojunction thin-film transistors (TFTs) fabrication. Such proton conductor reduces the operating voltage of the vertical homojunction TFTs to 0.8 V due to the enhanced electric-double-layer capacitance. Vertical ITO TFTs gated by such dielectric exhibit a good performance, such as a high current output (> 10 mA/cm(2)), a small subthreshold swing (< 80 mV/dec), a good ohmic contact, and a large on-off ratio (similar to 10(6)). These low-voltage TFTs are very promising for next-generation battery-powered portable sensors.
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