Related references
Note: Only part of the references are listed.Very low sheet resistance and Shubnikov-de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN/GaN heterojunctions
Yu Cao et al.
APPLIED PHYSICS LETTERS (2008)
AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
Tom Zimmermann et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Jinwook W. Chung et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R. Butte et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
AlN/GaN insulated-gate HFETs using Cat-CVD SiN
Masataka Higashiwaki et al.
IEEE ELECTRON DEVICE LETTERS (2006)
GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design
S Keller et al.
APPLIED PHYSICS LETTERS (2002)
Power electronics on InAlN/(In)GaN:: Prospect for a record performance
J Kuzmík
IEEE ELECTRON DEVICE LETTERS (2001)