In0.7Ga0.3As Tunneling Field-Effect Transistors With an I-on of 50 mu A/mu m and a Subthreshold Swing of 86 mV/dec Using HfO2 Gate Oxide

Vertical In0.7Ga0.3As tunneling field-effect transistors are demonstrated with a high on-current of 50 mu A/mu m (in comparison to reported values) and a minimum subthreshold swing (SS) of 86 mV/dec using atomic-layer-deposited HfO2 gate oxide. The tunneling diodes exhibit the gate-bias-dependent Esaki diode behavior with a negative differential resistance under the forward diode bias at various temperatures, which confirms that the conduction mechanism is, indeed, band-to-band tunneling. The effects of equivalent oxide thickness scaling and various temperatures on the on-current and the SS are also investigated.