Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 10, Pages 1098-1100Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2061833
Keywords
Carbon nanotube network; charge injection; field-effect transistor; hysteresis; relaxation
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Funding
- Ministry of Education of China [708033]
- State Key Laobratory of ASIC and Systems, Fudan University
- Swedish Agency for Innovation Systems (VINNOVA) [2005-01138]
- Swedish Research Council [2009-8068]
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A voltage-pulse method is utilized to investigate the charge-injection-induced time decay of the source-drain current of field-effect transistors with randomly networked single-walled carbon nanotubes (CNTs) as the conduction channel. The relaxation of trapped carriers in the CNT networks can be accounted for by assuming two exponential decays occurring simultaneously. The slow decay is characterized by a time constant comparable to literature data obtained for a carrier recombination in the semiconducting CNTs. The faster decay with a time constant that has a smaller order of magnitude is attributed to the annihilation of trapped carriers in metallic CNTs or at metal-CNT contacts. Both time constants are gate-bias dependent.
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