Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 11, Pages 1266-1268Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2064754
Keywords
Amorphous silicon solar; dark current; shunt leakage; space-charge-limited (SCL) current
Categories
Funding
- Solar Business Group, Applied Materials
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001085]
Ask authors/readers for more resources
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si: H p-i-n solar cells and show that it is characterized by following universal features: 1) voltage symmetry; 2) power-law voltage dependence; and 3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured shunt-contaminated forward dark IV. We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental observations from literature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available