Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 11, Pages 1308-1310Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2066542
Keywords
HfLaO; high-k; hybrid dielectric; organic thin-film transistors (TFTs) (OTFTs); ultrathin PVP
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Funding
- National Research Foundation of Korea [2009-0083380]
- National Research Foundation of Korea [2010-50174] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Low-voltage and high-performance pentacene thin-film transistors with a hybrid gate dielectric consisting of ultrathin PVP (8 nm) and a high-kappa HfLaO (20 nm) have been demonstrated. The hybrid gate dielectric exploits the advantages of both dielectrics, i.e., a good interface between the organic dielectric and channel material as well as the insulating properties of the inorganic metal-oxide, resulting in very low leakage current, hysteresis-free behavior, superior drain-current drivability, and successful operation at -2 V. The superior device performance is attributed to good intermolecular ordering and the large grain size of the pentacene channel layer formed on the hybrid dielectric.
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