Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 8, Pages 854-856Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2049562
Keywords
Geometric phase analysis (GPA); high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM); high-resolution transmission electron microscopy (HRTEM); local-strain measurement; strained Si
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This letter reports that geometric phase analysis of high-resolution images acquired in the high-angle annular dark-field scanning transmission electron microscopy can map strains at levels of accuracy and reproducibility needed for strained-silicon-device development. Two-dimensional strain maps were reconstructed for a p-type metal-oxide-semiconductor device which was strain-engineered using a recessed source and drain. This metrology provides sufficiently practical and reproducible local-strain tensors which can be measured on a routine basis. The techniques demonstrated here are informative for process development and failure analysis in the semiconductor industry.
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