Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 5, Pages 515-517Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2043497
Keywords
Four-terminal (4T) relay; MEMS; NEMS
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Funding
- DARPA/MTO NEMS
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Previously reported electrostatically actuated four-terminal (4T) relays suffer from a relatively weak body bias effect and undesirable influence of source/drain bias voltages on gate switching voltages. In this letter, an improved 4T relay design is demonstrated to resolve these issues.
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