Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 6, Pages 603-605Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2046010
Keywords
Bipolar switching; low-frequency noise (LFN); random telegraph noise (RTN); resistance random access memories (RRAMs)
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Funding
- Korean government (MEST) [2009-0063395]
- National Research Foundation of Korea [2008-0062428] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise (S-i/I-2) in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S-i/I-2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices.
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