Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 6, Pages 567-569Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2046133
Keywords
Indium oxide; thin films; thin-film transistors (TFTs)
Categories
Funding
- National Science Foundation [0729250]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0729250] Funding Source: National Science Foundation
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Thin-film transistors (TFTs) were fabricated using an indium oxide (In2O3) thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 48-8 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In2O3 TFTs had a field-effect mobility of 15.3 cm(2) . V-1 . s(-1), a threshold voltage of 3.1 V, an ON-OFF current ratio of 2.2 x 10(8), a subthreshold gate voltage swing of 0.25 V . decade(-1), and, most importantly, a normally OFF characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
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