Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 5, Pages 503-505Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2041743
Keywords
Gold nanoparticles; nonvolatile memory; organic memory; pentacene
Categories
Funding
- World Gold Council [RP05-08]
- National Research Foundation of Korea (NRF)/MEST [R11-2005-048-00000-0]
- Korean Ministry of Knowledge Economy
- Korean government (MEST) [313-2008-2-D00597, 2008-0059952, 2009-0077593]
- National Research Foundation of Korea [2009-0077593, 2008-0060669, 2008-0059952] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Nano-floating-gate memory devices having multistack charge-trapping layers are developed. Controlled gold nanoparticles encapsulated with polyelectrolytes are used as charge-trapping elements. Programmable memory characteristics are observed according to the programming/erasing operations in pentacene-based organic-transistor memory devices. The memory window can be increased effectively by the adoption of multistack charge-trapping layers. The data-retention measurement shows that the programmed/erased states are maintained relatively well according to the time elapsed. This letter is based on simple solution processes at low temperature, so it has a potential use in fabricating nano-floating-gate memory devices on plastic substrates.
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