Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 2, Pages 141-143Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2036138
Keywords
Mobility; orientation; SiGe; strain; (110)
Categories
Funding
- National Science Council [98-2221-E-003-020-MY3, 97-2622-E-003-003-CC1]
- National Nano Device Laboratories
- Electronics and Optoelectronics Research Laboratories
- Industrial Technology Research Institute, Taiwan
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The characteristics of Si0.2Ge0.8 channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0.2Ge0.8 (110) PFET are enhanced by 70% and by 80% for the < 110 > channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe < 110 >/(110) PFET has similar to 200% hole mobility enhancement. The performance difference of the SiGe < 110 >/(110) and < 100 >/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.
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